Surface morphology and structural properties of GaTe crystals after ion-plasma treatment

The effect of ion-plasma treatment on the physical properties surface GaTe crystals is investigated. Gallium telluride were grown by vertical zone melting under pressure an inert argon gas 10.0 MPa at a temperature 1000 o C and displacement velocity 9 mm/hr. was carried out in plasma high-density low-pressure radio frequency (RF) inductively coupled reactor ion energy 100-200 eV for 15-120 s. Using scanning electron microscopy methods, it shown that formation nano- submicron structures various architectures (nanohillocks, nanocones, droplet structures) occurred during processing. It sputtering processes are accompanied enrichment near-surface layer with metal atoms decrease oxygen content. gallium droplets has been proved X-ray diffractometry. analysis Raman scattering spectra showed oxide phases tellurium after treatment. established modification leads to suppression specular optical reflection range 0.4-6.2 eV. Keywords: telluride, treatment, nanostructures, diffractometry, scattering, spectra.